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| LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: * Replacement for Philips LTE21015R * Gold Metalization * Emitter Ballasting PACKAGE STYLE .250 2L FLG Dim: A B C D E F H J K N Q U Inches Min 0.790 0.240 0.144 0.115 0.055 0.045 0.115 0.003 0.225 0.220 0.125 0.552 Max 0.810 0.260 0.170 0.125 0.065 0.055 0.135 0.006 0.275 0.240 0.135 0.572 Millimeters Min Max 20.07 20.57 6.10 6.60 3.66 4.31 2.93 3.17 1.40 1.65 1.15 1.39 2.93 3.42 0.08 0.15 5.72 6.98 5.59 6.09 3.18 3.42 14.03 14.52 MAXIMUM RATINGS IC VCB PDISS TJ T STG JC 800 mA 45 V 6.0 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 15 OC/W 1 = BASE 2 = COLLECTOR 3 = EMITTER ORDER CODE: ASI10473 CHARACTERISTICS SYMBOL BV CBO BV CEO BV EBO hFE Cob Pg P1db IC = 2.0 mA IC = 20 mA IE = 2.0 mA VCE = 5.0 V VCB = 28 V VCE = 15 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 45 22 3.5 UNITS V V V --- IC = 200 mA f = 1.0 MHz IC = 250 mA f = 2.1 GHz 20 5.0 7.8 1.5 1.7 pF dB W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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